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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D438
BLF1043 UHF power LDMOS transistor
Product specification Supersedes data of 2002 November 11 2003 Mar 13
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA - Output power = 10 W (PEP) - Gain = 18.5 dB - Efficiency = 40% - dim = -31 dBc * Easy power control * Excellent ruggedness * High power gain * Excellent thermal stability * Designed for broadband operation (HF to 1000 MHz) * No internal matching for broadband operation * SMD package. APPLICATIONS * RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range * Broadcast drivers. DESCRIPTION 10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, 2-tone, class-AB CW, 1-tone, class-AB f (MHz) f1 = 960; f2 = 960.1 f = 960 VDS (V) 26 26 CAUTION IDQ (mA) 85 85 PL (W) 10 (PEP) 10 Gp (dB) 18.5 18.5
2 Top view 3 1
BLF1043
PINNING - SOT538A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
MBK905
Fig.1 Simplified outline.
D (%) 40 52
dim (dBc) -31 -
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Mar 13
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature - - - -65 - MIN. 65 15 2.2 +150 200 MAX.
BLF1043
UNIT V V A C C
THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Thermal resistance is determined under RF operating conditions. Typical value with device soldered on PC board with 32 via holes (diameter 0.3 mm) and thermal compound between PCB and heatsink. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.2 mA VDS = 10 V; ID = 20 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 0.75 A VDS = 10 V; ID = 0.75 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4 - 2.8 - - - - - - TYP. - - - - - 0.5 1.05 11 9 0.5 MAX. - 5 1.5 - 40 - - - - - UNIT V V A A nA S pF pF pF PARAMETER CONDITIONS VALUE 9 UNIT K/W
thermal resistance from junction to heatsink Tmb = 25 C; note 1
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth j-h = 9 K/W, unless otherwise specified. MODE OF OPERATION CW, 2-tone, class-AB f (MHz) f1 = 960; f2 = 960.1 VDS (V) 26 IDQ (mA) 85 PL (W) 10 (PEP) Gp (dB) >16.5 D (%) >38 dim (dBc) -25
Ruggedness in class-AB operation The BLF1043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power.
2003 Mar 13
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1043
handbook, halfpage
20
MDB150
Gp
60 D (%)
handbook, halfpage
0
MDB151
Gp (dB) 16 D
dim (dBC) -20
40
d3 d5 d7
-40
12
20 -60
8 0 4 8 12 16 PL (PEP)(W)
0
-80
0
4
8
12 16 PL (PEP)(W)
Two-tone performance. VDS = 26 V; IDQ = 85 mA; Th 25 C; f1 = 960 MHz; f2 = 960.1 MHz.
Two-tone performance. VDS = 26 V; IDQ = 85 mA; Th 25 C; f1 = 960 MHz; f2 = 960.1 MHz.
Fig.2
Power gain and efficiency as functions of peak envelope load power; typical values.
Fig.3
Intermodulation distortion as a function of peak envelope load power; typical values.
handbook, halfpage
22
MDB152
70 D (%)
handbook, halfpage
6
MDB148
Gp (dB)
Zi () 2 ri
Gp
18
50
-2 D
14
30 -6 Xi -10 800
10 0 4 8 12 16 PL (W)
10 20
840
880
920
960 1000 f (MHz)
Single-tone performance. VDS = 26 V; IDQ = 85 mA; Th 25 C; f = 960 MHz.
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th 25 C. Impedance measured at reference planes; see Fig.7.
Fig.4
Power gain and efficiency as functions of load power; typical values.
Fig.5
Input impedance as a function of frequency (series components); typical values.
2003 Mar 13
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1043
handbook, halfpage
12
MDB149
ZL () 8
RL
XL
handbook, halfpage
4
0 800
reference planes 840 880 920 960 1000 f (MHz)
MGT002
VDS = 26 V; IDQ = 85 mA; Th 25 C. Impedance measured at reference planes; see Fig.7.
Fig.6
Input impedance as a function of frequency (series components); typical values.
Fig.7 Measuring reference planes: SOT538A.
handbook, halfpage
drain ZL gate Z IN
MGS998
Fig.8 Definition of transistor impedance.
2003 Mar 13
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1043
handbook, full pagewidth
VDS C11 L2 R2 C12
VGS C4 C3 R1 L7 50 input L3 C2 L4 L5 L6 C5 C1
MDB153
L1
C7
C8
C9
C10
L8
L9
C6
L10 50 output
Fig.9 Class-AB test circuit for 960 MHz.
2003 Mar 13
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components (see Figs 9 and 10) COMPONENT C1, C5 C2, C3, C6, C7 C4, C10 C8 C9 C11 C12 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 R1 R2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION Tekelec variable capacitor tantalum SMD capacitor multilayer ceramic chip capacitor electrolytic capacitor 3 turns enamelled 0.5 mm copper wire ferrite bead; ferroxcube CBD4.6/3/3-4S2 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 metal film resistor metal film resistor 50 50 42 31 50 65 50 50 39 , 0.6 W 10 , 0.6 W 3.5 x 1.5 mm 2 x 1.5 mm 5 x 2 mm 13 x 3 mm 10 x 1.5 mm 5.9 x 1 mm 2 x 1.5 mm 3.5 x 1.5 mm VALUE 0.8 to 8 pF 10 F; 35 V 100 nF 100 F; 63 V 3 loops; d = 3.5 mm DIMENSIONS
BLF1043
CATALOGUE NO.
multilayer ceramic chip capacitor; note 1 56 pF multilayer ceramic chip capacitor; note 1 1 nF 2222 581 16641 2222 037 58101 multilayer ceramic chip capacitor; note 2 1 nF
2322 256 11009
3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (r = 2.2); thickness 0.51 mm.
2003 Mar 13
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Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1043
handbook, full pagewidth
52.3
53.7
VGS
C11 C12 VDS L2 R2
C4
C10 C9 C8 C7 R1 C2 C1 C5
MDB154
C3 L1
BLF1043
C6
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 2.2), thickness 0.51 mm. The other side is unetched and serves as a ground plane.
Fig.10 Component layout for 960 MHz class-AB test circuit.
2003 Mar 13
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Ceramic surface mounted package; 2 leads
BLF1043
SOT538A
D
A
z2 (4x) D1 D2
3
z4 (4x) B c
1 A L
z1 (4x) H E2 E1 E
z3 (4x) 2 w1 M B M 0 2.5 scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.95 2.29 0.116 0.090 b 1.35 1.19 0.053 0.047 c 0.23 0.18 0.009 0.007 D 5.16 5.00 0.203 0.197 D1 4.65 4.50 0.183 0.177 D2 5.16 5.00 0.203 0.197 E 4.14 3.99 0.163 0.157 E1 3.63 3.48 0.143 0.137 E2 4.14 3.99 0.163 0.157 H 7.49 7.24 0.295 0.285 L 2.03 1.27 0.080 0.050 Q 0.10 0.00 w1 0.25 z1 0.58 0.43 z2 0.25 0.18 z3 0.97 0.81 0.038 0.032 z4 0.51 0.00 0.020 0.000 5 mm
b
Q
7 0 7 0
0.004 0.010 0.000
0.023 0.010 0.017 0.007
OUTLINE VERSION SOT538A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 00-03-03 02-08-20
2003 Mar 13
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BLF1043
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Mar 13
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF1043
2003 Mar 13
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/07/pp12
Date of release: 2003
Mar 13
Document order number:
9397 750 10913

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